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Irf840

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRF8408A, 500V, 0.850 Ohm, N-Channel Power MOSFETIntersil-Corporation----56 K
IRF840HEXFET power MOSFET. VDS = 500V, RDS(on) = 0.85 Ohm , ID = 8.0AInternational-Rectifier-3-55°C150°C170 K
IRF840500 V, Power MOS transistor avalanche energy ratedPhilips-SemiconductorsSOT3-55°C150°C60 K
IRF840N-CHANNEL 500V - 0.75 OHM - 8A - TO-220 POWERMESH MOSFETSGS-Thomson-Microelectronics----93 K
IRF840AHEXFET power MOSFET. VDS = 500V, RDS(on) = 0.85 Ohm , ID = 8.0AInternational-Rectifier-3-55°C150°C89 K
IRF840ALHEXFET power MOSFET. VDS = 500V, RDS(on) = 0.85 Ohm , ID = 8.0AInternational-Rectifier-3-55°C150°C129 K
IRF840ASHEXFET power MOSFET. VDS = 500V, RDS(on) = 0.85 Ohm , ID = 8.0AInternational-RectifierDDPak3-55°C150°C129 K
IRF840LCLHEXFET power MOSFET. VDS = 500V, RDS(on) = 0.85 Ohm , ID = 8.0AInternational-Rectifier-3-55°C150°C173 K
IRF840LCSHEXFET power MOSFET. VDS = 500V, RDS(on) = 0.85 Ohm , ID = 8.0AInternational-RectifierDDPak3-55°C150°C173 K
IRF840SHEXFET power MOSFET. VDS = 500V, RDS(on) = 0.85 Ohm , ID = 8.0AInternational-Rectifier-3-55°C150°C172 K
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