| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HJ41C | Emitter to base voltage:5V 6A NPN epitaxial planar transistor for use in general purpose amplifier and switching applications | distributor | - | 3 | - | - | 32 K |
| KBJ410G | 4AMP glass passivated silicon bridgfe rectifier | distributor | KBJ | 4 | -55°C | 150°C | 751 K |
| KBJ410G | 1000V; 4.0A glass passivated bridge rectifier | distributor | Molded Plastic | 4 | -65°C | 150°C | 53 K |
| KBJ410G | 1000V, 4.0A glass passivated bridge rectifier | distributor | KBJ | 4 | -55°C | 150°C | 52 K |
| MJ410 | High-voltage NPN-PNP silicon transistor | Motorola | - | 2 | -65°C | 200°C | 139 K |
| MJ413 | High-voltage NPN silicon transistor | Motorola | - | 2 | -65°C | 200°C | 134 K |
| SMJ416160 | 1048576 by 16-bit dynamic random-access memory | distributor | Flat pack | 50 | -55°C | 125°C | 363 K |
| SMJ416400 | 4194304 by 4-bit dynamic random-access memory | distributor | DIP | 24 | -55°C | 125°C | 345 K |
| SMJ416400 | 4194304 by 4-bit dynamic random-access memory | distributor | DIP | 28 | -55°C | 125°C | 345 K |
| SMJ418160 | 1048576 by 16-bit dynamic random-access memory | distributor | Flat pack | 50 | -55°C | 125°C | 363 K |
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