| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| EN29LV800JB-70T | 8 Megabit (1024K x 8-bit/512K x 16-bit) flach memory. Boot sector flash memory, CMOS 3.0 volt only. Speed 70ns. Bottom sector. | distributor | TSOP | 48 | 0°C | 70°C | 235 K |
| MH16S72AVJB-6 | 1207959552-bit synchronous DRAM module | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 168 | 0°C | 70°C | 950 K |
| MH16S72PJB-7 | 1207959552-bit synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 168 | 0°C | 70°C | 733 K |
| MH16S72PJB-8 | 1207959552-bit synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 168 | 0°C | 70°C | 733 K |
| MH16S72VJB-6 | 1,207,959,552-bit (16,777,216-word by 72-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 930 K |
| MH16S72VJB-6 | 1207959552-bit synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 168 | 0°C | 70°C | 930 K |
| S-80747AN-JB-S | High-precision voltage detector | Seiko-Epson-Corporation | - | 3 | -30°C | 80°C | 2 M |
| S-80747AN-JB-T1 | High-precision voltage detector | Seiko-Epson-Corporation | - | 3 | -30°C | 80°C | 2 M |
| S-80747AN-JB-T2 | High-precision voltage detector | Seiko-Epson-Corporation | - | 3 | -30°C | 80°C | 2 M |
| S-80847ANNP-EJB-T2 | Low-voltage high-precision voltage detector | Seiko-Epson-Corporation | - | 4 | -40°C | 85°C | 1 M |
| 1 [2] [3] |
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