| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| GD80960JD-33 | 3.3 V embedded 32-bit microprocessor. 33 MHz core, 16 MHz bus | Intel-Corporation | MPBGA | 196 | 0°C | 100°C | 835 K |
| GD80960JD-40 | 3.3 V embedded 32-bit microprocessor. 40 MHz core, 20 MHz bus | Intel-Corporation | MPBGA | 196 | 0°C | 100°C | 835 K |
| GD80960JD-50 | 3.3 V embedded 32-bit microprocessor. 50 MHz core, 25 MHz bus | Intel-Corporation | MPBGA | 196 | 0°C | 100°C | 835 K |
| GD80960JD-50 | 3.3 V embedded 32-bit microprocessor. 50 MHz core, 25 MHz bus | Intel-Corporation | MPBGA | 196 | 0°C | 100°C | 835 K |
| GD80960JD-50 | 3.3 V embedded 32-bit microprocessor. 50 MHz core, 25 MHz bus | Intel-Corporation | MPBGA | 196 | 0°C | 100°C | 835 K |
| NG80960JD-50 | 3.3 V embedded 32-bit microprocessor. 50 MHz core, 25 MHz bus | Intel-Corporation | PQFP | 132 | 0°C | 100°C | 744 K |
| S-80749AN-JD-S | High-precision voltage detector | Seiko-Epson-Corporation | - | 3 | -30°C | 80°C | 2 M |
| S-80749AN-JD-T1 | High-precision voltage detector | Seiko-Epson-Corporation | - | 3 | -30°C | 80°C | 2 M |
| S-80749AN-JD-T2 | High-precision voltage detector | Seiko-Epson-Corporation | - | 3 | -30°C | 80°C | 2 M |
| S-80849ANNP-EJD-T2 | Low-voltage high-precision voltage detector | Seiko-Epson-Corporation | - | 4 | -40°C | 85°C | 1 M |
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