| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SK1052 | N-channel MOS silicon FET, very high-speed switching application | SANYO-Electric-Co--Ltd- | 2052B | 3 | - | - | 89 K |
| 2SK1053 | N-channel MOS silicon FET, very high-speed switching application | SANYO-Electric-Co--Ltd- | 2052B | 3 | - | - | 91 K |
| 2SK1065 | N-channel junction silicon FET, high-frequency general-purpose amp application | SANYO-Electric-Co--Ltd- | 2057 | 3 | - | - | 107 K |
| 2SK1066 | N-channel junction silicon FET, high-frequency general-purpose amp application | SANYO-Electric-Co--Ltd- | 2058 | 3 | - | - | 210 K |
| 2SK1067 | N-channel MOS silicon FET, FM tuner, VHF-band amp application | SANYO-Electric-Co--Ltd- | 2057 | 3 | - | - | 109 K |
| 2SK1068 | N-channel junction silicon FET, impedance conversion application | SANYO-Electric-Co--Ltd- | 2058 | 3 | - | - | 80 K |
| 2SK1069 | N-channel junction silicon FET, low-frequency general-purpose amp application | SANYO-Electric-Co--Ltd- | 2058 | 3 | - | - | 84 K |
| CXK1012P | 1024-bit (128word x 8bit) non-volatile memory | Sony-Semiconductor | - | 8 | -40°C | 85°C | 473 K |
| SID1K10CM | Infrared LED | Sanken-Electric-Co- | - | - | - | - | 41 K |
| SID1K10CXM | Infrared LED | Sanken-Electric-Co- | - | - | - | - | 41 K |
| [1] [2] [3] 4 [5] [6] [7] [8] [9] [10] |
|---|
