| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HSK120 | High frequency small signal diode | distributor | LLD | - | - | - | 26 K |
| IXFK120N20 | 200V HiPerFET power MOSFET | distributor | - | 3 | -55°C | 150°C | 48 K |
| IXFK120N25 | 250V HiPerFET power MOSFET | distributor | - | 3 | -55°C | 150°C | 98 K |
| IXGK120N60B | 600V HiPerFAST IGBT | distributor | - | 3 | -55°C | 150°C | 46 K |
| IXGK120N60B | 600V HiPerFAST IGBT | distributor | - | 3 | -55°C | 150°C | 46 K |
| IXTK120N25 | 250V high current megaMOS FET | distributor | - | 3 | -55°C | 150°C | 85 K |
| K120 | Silicon bilateral voltage triggered switch. Breakover voltage 110V (min) to 125V (max). | distributor | - | - | - | - | 93 K |
| PM25RSK120 | 25 Amp intelligent power module for flat-base type insulated package | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 25 | -20°C | 150°C | 72 K |
| PM25RSK120 | 25Amp - intelligent power modules | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | - | - | 925 K |
| PM25RSK120 | 1200V, 25A seven pac IGBT module | distributor | - | - | - | - | 84 K |
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