Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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2SK2218 | N-channel junction silicon FET, high-frequency, low-noise amp application | SANYO-Electric-Co--Ltd- | 2125 | 3 | - | - | 130 K |
2SK2219 | N-channel junction silicon FET, capacitor microphone application | SANYO-Electric-Co--Ltd- | 2058A | 3 | - | - | 97 K |
2SK2260 | N-channel MOS silicon FET, very high-speed switching application | SANYO-Electric-Co--Ltd- | 2062A | 3 | - | - | 88 K |
2SK2273 | N-channel MOS silicon FET, very high-speed switching application | SANYO-Electric-Co--Ltd- | 2091A | 3 | - | - | 72 K |
3SK222 | Dual-gate MOS FET | NEC-Electronics-Inc- | - | - | - | - | 58 K |
3SK222-T1 | Dual-gate MOS FET | NEC-Electronics-Inc- | - | - | - | - | 58 K |
3SK222-T2 | Dual-gate MOS FET | NEC-Electronics-Inc- | - | - | - | - | 58 K |
3SK223 | UHF band high frequency amplification | NEC-Electronics-Inc- | - | - | - | - | 57 K |
3SK223-T1 | UHF band high frequency amplification | NEC-Electronics-Inc- | - | - | - | - | 57 K |
3SK223-T2 | UHF band high frequency amplification | NEC-Electronics-Inc- | - | - | - | - | 57 K |
[1] 2 [3] [4] [5] [6] [7] [8] [9] [10] |
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