| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| K4E160411D-B | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. | Samsung-Electronic | SOJ | 26 | 0°C | 70°C | 256 K |
| K4E160411D-B | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. | Samsung-Electronic | SOJ | 24 | 0°C | 70°C | 256 K |
| K4E160411D-F | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. | Samsung-Electronic | - | 26 | 0°C | 70°C | 256 K |
| K4E160412D-B | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. | Samsung-Electronic | SOJ | 26 | 0°C | 70°C | 256 K |
| K4E160412D-B | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. | Samsung-Electronic | SOJ | 24 | 0°C | 70°C | 256 K |
| K4E160812D-F | 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. | Samsung-Electronic | - | 28 | 0°C | 70°C | 257 K |
| K4E170411D-B | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. | Samsung-Electronic | SOJ | 26 | 0°C | 70°C | 256 K |
| K4E170411D-B | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. | Samsung-Electronic | SOJ | 24 | 0°C | 70°C | 256 K |
| K4E170412D-B | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. | Samsung-Electronic | SOJ | 26 | 0°C | 70°C | 256 K |
| K4E170412D-B | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. | Samsung-Electronic | SOJ | 24 | 0°C | 70°C | 256 K |
| [1] [2] 3 [4] [5] [6] [7] [8] [9] [10] |
|---|
