| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| K4S641632F-TC50 | CMOS SDRAM 4 x 1,048,576 words by 16 bits, max freq. 200MHz, LVTTL interface | Samsung-Electronic | TSOP II | 54 | 0°C | 70°C | 133 K |
| K4S641632F-TL1L | CMOS SDRAM 4 x 1,048,576 words by 16 bits, max freq. 100MHz, LVTTL interface | Samsung-Electronic | TSOP II | 54 | 0°C | 70°C | 133 K |
| K4S641632F-TL1L | CMOS SDRAM 4 x 1,048,576 words by 16 bits, max freq. 100MHz, LVTTL interface | Samsung-Electronic | TSOP II | 54 | 0°C | 70°C | 133 K |
| K4S641632F-TL50 | CMOS SDRAM 4 x 1,048,576 words by 16 bits, max freq. 200MHz, LVTTL interface | Samsung-Electronic | TSOP II | 54 | 0°C | 70°C | 133 K |
| K4S643232F-TC55 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 3.3V, 183MHz | Samsung-Electronic | TSOP II | 86 | 0°C | 70°C | 101 K |
| K4S643232F-TC60 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 3.3V, 166MHz | Samsung-Electronic | TSOP II | 86 | 0°C | 70°C | 101 K |
| K4S643232F-TC70 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 3.3V, 143MHz | Samsung-Electronic | TSOP II | 86 | 0°C | 70°C | 101 K |
| K4S643232F-TL55 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 3.3V, 183MHz | Samsung-Electronic | TSOP II | 86 | 0°C | 70°C | 101 K |
| K4S643232F-TL60 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 3.3V, 166MHz | Samsung-Electronic | TSOP II | 86 | 0°C | 70°C | 101 K |
| K4S643232F-TL70 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 3.3V, 143MHz | Samsung-Electronic | TSOP II | 86 | 0°C | 70°C | 101 K |
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