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K4S641632F

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
K4S641632F-TC1HCMOS SDRAM 4 x 1,048,576 words by 16 bits, max freq. 100MHz, LVTTL interfaceSamsung-ElectronicTSOP II540°C70°C133 K
K4S641632F-TC1HCMOS SDRAM 4 x 1,048,576 words by 16 bits, max freq. 100MHz, LVTTL interfaceSamsung-ElectronicTSOP II540°C70°C133 K
K4S641632F-TC1LCMOS SDRAM 4 x 1,048,576 words by 16 bits, max freq. 100MHz, LVTTL interfaceSamsung-ElectronicTSOP II540°C70°C133 K
K4S641632F-TC55CMOS SDRAM 4 x 1,048,576 words by 16 bits, max freq. 183MHz, LVTTL interfaceSamsung-ElectronicTSOP II540°C70°C133 K
K4S641632F-TC70CMOS SDRAM 4 x 1,048,576 words by 16 bits, max freq. 143MHz, LVTTL interfaceSamsung-ElectronicTSOP II540°C70°C133 K
K4S641632F-TC75CMOS SDRAM 4 x 1,048,576 words by 16 bits, max freq. 133MHz, LVTTL interfaceSamsung-ElectronicTSOP II540°C70°C133 K
K4S641632F-TL1HCMOS SDRAM 4 x 1,048,576 words by 16 bits, max freq. 100MHz, LVTTL interfaceSamsung-ElectronicTSOP II540°C70°C133 K
K4S641632F-TL60CMOS SDRAM 4 x 1,048,576 words by 16 bits, max freq. 166MHz, LVTTL interfaceSamsung-ElectronicTSOP II540°C70°C133 K
K4S641632F-TL70CMOS SDRAM 4 x 1,048,576 words by 16 bits, max freq. 143MHz, LVTTL interfaceSamsung-ElectronicTSOP II540°C70°C133 K
K4S641632F-TL75CMOS SDRAM 4 x 1,048,576 words by 16 bits, max freq. 133MHz, LVTTL interfaceSamsung-ElectronicTSOP II540°C70°C133 K
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