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KM416C1004

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
KM416C1004CJ-451M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=64msSamsung-ElectronicSOJ420°C70°C804 K
KM416C1004CJ-51M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64msSamsung-ElectronicSOJ420°C70°C804 K
KM416C1004CJ-61M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64msSamsung-ElectronicSOJ420°C70°C804 K
KM416C1004CJL-51M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refreshSamsung-ElectronicSOJ420°C70°C804 K
KM416C1004CJL-61M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refreshSamsung-ElectronicSOJ420°C70°C804 K
KM416C1004CT-451M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=64msSamsung-ElectronicTSOP440°C70°C804 K
KM416C1004CT-51M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64msSamsung-ElectronicTSOP440°C70°C804 K
KM416C1004CT-61M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64msSamsung-ElectronicTSOP440°C70°C804 K
KM416C1004CTL-51M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refreshSamsung-ElectronicTSOP440°C70°C804 K
KM416C1004CTL-61M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refreshSamsung-ElectronicTSOP440°C70°C804 K
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