| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FA1L4L-T2B | Compound transistor | NEC-Electronics-Inc- | - | - | - | - | 160 K |
| FA1L4L-T2B | Compound transistor | NEC-Electronics-Inc- | - | - | - | - | 160 K |
| FN1L4L-T2B | Compound transistor | NEC-Electronics-Inc- | - | - | - | - | 171 K |
| GA1L4L-T2 | Hybrid transistor | NEC-Electronics-Inc- | - | - | - | - | 186 K |
| GN1L4L-T2 | Hybrid transistor | NEC-Electronics-Inc- | - | - | - | - | 172 K |
| S-80723AL-AL-T2 | High-precision voltage detector | Seiko-Epson-Corporation | - | 3 | -30°C | 80°C | 2 M |
| S-80723AN-DL-T2 | High-precision voltage detector | Seiko-Epson-Corporation | - | 3 | -30°C | 80°C | 2 M |
| S-80723SL-AL-T2 | High-precision voltage detector | Seiko-Epson-Corporation | - | 5 | -30°C | 80°C | 2 M |
| S-80723SN-DL-T2 | High-precision voltage detector | Seiko-Epson-Corporation | - | 5 | -30°C | 80°C | 2 M |
| S-80823ANNP-EDL-T2 | Low-voltage high-precision voltage detector | Seiko-Epson-Corporation | - | 4 | -40°C | 85°C | 1 M |
| 1 [2] [3] |
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