Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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A29L008UV-90 | 90ns; active read:9mA; programm/erase:20mA 0.2uA 1M x 8bit CMOS 3.0V-only boot sector flash memory | distributor | TSOP | 40 | 0°C | 70°C | 335 K |
A29L008UV-90U | 90ns; active read:9mA; programm/erase:20mA 0.2uA 1M x 8bit CMOS 3.0V-only boot sector flash memory | distributor | TSOP | 40 | 0°C | 70°C | 335 K |
A29L008UV-90U | 90ns; active read:9mA; programm/erase:20mA 0.2uA 1M x 8bit CMOS 3.0V-only boot sector flash memory | distributor | TSOP | 40 | 0°C | 70°C | 335 K |
GBL005 | Single phase glass passivated bridge rectifier. Maximum recurrent peak reverse voltage 50 V. Maximum average forward rectified current 4.0 A. | distributor | GBL | 4 | -55°C | 150°C | 156 K |
KBL005 | Single phase glass bridge rectifier. Maximum recurrent peak reverse voltage 50 V. Maximum average forward rectified current 4.0 A. | distributor | KBL | 4 | -65°C | 125°C | 155 K |
KBL005 | 50 V, 4 A single-phase silicon bridge | distributor | KBL | 4 | -55°C | 150°C | 128 K |
KBL005 | 50 V, 4 A single-phase silicon bridge rectifier | distributor | Plastic | 4 | -55°C | 125°C | 110 K |
PJ78L00CS | 35V; 3-terminal low current positive voltage regulator | distributor | SOP | 8 | -20°C | 85°C | 286 K |
PJ78L00CT | 35V; 3-terminal low current positive voltage regulator | distributor | - | 3 | -20°C | 85°C | 286 K |
W4NXD8C-L000 | Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | distributor | - | - | - | - | 279 K |
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