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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
A29L008UV-9090ns; active read:9mA; programm/erase:20mA 0.2uA 1M x 8bit CMOS 3.0V-only boot sector flash memorydistributorTSOP400°C70°C335 K
A29L008UV-90U90ns; active read:9mA; programm/erase:20mA 0.2uA 1M x 8bit CMOS 3.0V-only boot sector flash memorydistributorTSOP400°C70°C335 K
A29L008UV-90U90ns; active read:9mA; programm/erase:20mA 0.2uA 1M x 8bit CMOS 3.0V-only boot sector flash memorydistributorTSOP400°C70°C335 K
GBL005Single phase glass passivated bridge rectifier. Maximum recurrent peak reverse voltage 50 V. Maximum average forward rectified current 4.0 A.distributorGBL4-55°C150°C156 K
KBL005Single phase glass bridge rectifier. Maximum recurrent peak reverse voltage 50 V. Maximum average forward rectified current 4.0 A.distributorKBL4-65°C125°C155 K
KBL00550 V, 4 A single-phase silicon bridgedistributorKBL4-55°C150°C128 K
KBL00550 V, 4 A single-phase silicon bridge rectifierdistributorPlastic4-55°C125°C110 K
PJ78L00CS35V; 3-terminal low current positive voltage regulatordistributorSOP8-20°C85°C286 K
PJ78L00CT35V; 3-terminal low current positive voltage regulatordistributor-3-20°C85°C286 K
W4NXD8C-L000Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride depositiondistributor----279 K
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