Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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BUL1603ED | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 186 K |
KM48L16031BT-F0 | 128 Mb DDR SDRAM. Version 0.61, Operating freq. 100 MHz, speed 10 ns. | Samsung-Electronic | - | 66 | 0°C | 70°C | 750 K |
KM48L16031BT-FY | 128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. | Samsung-Electronic | - | 66 | 0°C | 70°C | 750 K |
KM48L16031BT-FZ | 128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. | Samsung-Electronic | - | 66 | 0°C | 70°C | 750 K |
KM48L16031BT-G0 | 128 Mb DDR SDRAM. Version 0.61, Operating freq. 100 MHz, speed 10 ns. | Samsung-Electronic | - | 66 | 0°C | 70°C | 750 K |
KM48L16031BT-GY | 128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. | Samsung-Electronic | - | 66 | 0°C | 70°C | 750 K |
KM48L16031BT-GZ | 128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. | Samsung-Electronic | - | 66 | 0°C | 70°C | 750 K |
RL1603C | Glass passivated silicon rectifier. Max recurrent peak reverse voltage 200V, max RMS bridge input voltage 140V, max DC blocking voltage 200V. Max average forward rectified current 16.0A at Tc=100degC. | distributor | - | 4 | -65°C | 150°C | 26 K |
RL1603CS | Glass passivated silicon rectifier. Max recurrent peak reverse voltage 200V, max RMS voltage 140V, max DC blocking voltage 200V. Max average forward rectified current 16.0A at Tc=100degC. | distributor | D2PAK | 3 | -65°C | 150°C | 23 K |
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