| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| ML60127R | High power AlGaAs semiconductor laser diode for optical information systems | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -10°C | 60°C | 774 K |
| ML60128R | High power AlGaAs semiconductor laser diode for optical information systems | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -10°C | 60°C | 21 K |
| ML601J27 | High power AlGaAs semiconductor laser diode for optical information systems | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -10°C | 60°C | 774 K |
| ML601J28 | High power AlGaAs semiconductor laser diode for optical information systems | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -10°C | 60°C | 21 K |
| ML601J28 | High power AlGaAs semiconductor laser diode for optical information systems | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -10°C | 60°C | 21 K |
| OM100L60CMIS | 600V three phase bridge configuration modules | distributor | - | - | -55°C | 150°C | 191 K |
| OM120L60SB | 600V, up to 150 Amp IGBT with FRED diodes | distributor | - | 3 | -55°C | 150°C | 37 K |
| OM60L60HB | 600V high current, high voltage IGBT with FRED diodes | distributor | Hermetic | 6 | -55°C | 150°C | 39 K |
| OM60L60PB | 600V high current IGBT with FRED diodes | distributor | Hermetic | 6 | -55°C | 150°C | 39 K |
| OM60L60SB | 600V high current IGBT with FRED diodes | distributor | Hermetic | 3 | -55°C | 150°C | 18 K |
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