| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| ISPLSI2064VE-135LB100 | 135 MHz 3.3V in-system prommable superFAST high density PLD | Lattice-Semiconductor-Corporation | CPGA | 100 | -55°C | 125°C | 200 K |
| ISPLSI2064VE-200LB100 | 280 MHz 3.3V in-system prommable superFAST high density PLD | Lattice-Semiconductor-Corporation | CPGA | 100 | -55°C | 125°C | 200 K |
| ISPLSI2064VE-280LB100 | 280 MHz 3.3V in-system prommable superFAST high density PLD | Lattice-Semiconductor-Corporation | CPGA | 100 | -55°C | 125°C | 200 K |
| SBLB1030 | Schottky Rectifier | General-Semiconductor | - | - | - | - | 37 K |
| SBLB1030CT | Schottky Rectifier | General-Semiconductor | - | - | - | - | 95 K |
| SBLB1040 | Schottky Rectifier | General-Semiconductor | - | - | - | - | 37 K |
| SBLB1040CT | Schottky Rectifier | General-Semiconductor | - | - | - | - | 95 K |
| VLB10-12F | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 17 K |
| VLB10-12S | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 16 K |
| VLB100-12 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 18 K |
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