| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRLD024 | N-channel MOSFET for fast switching applications, 60V, 2.5A | International-Rectifier | - | 3 | -55°C | 175°C | 170 K |
| RLD03N06CLE | Power dissipation 30 W Transistor polarity N Channel Current Id cont. 0.3 A Voltage Vgs th max. 2.5 V (I-Pak) Voltage Vds max 30 V Resistance Rds on 6 R Voltage ESD breakdown 2 kV Current limit (max) 420 mA | Fairchild-Semiconductor | - | - | - | - | 188 K |
| SST58LD024-70-C-P1H | ATA-disc chip | Silicon-Storage-Technology-Inc- | PSDIP | 32 | 0°C | 70°C | 363 K |
| SST58LD048-70-C-P1H | ATA-disc chip | Silicon-Storage-Technology-Inc- | PSDIP | 32 | 0°C | 70°C | 363 K |
| SST58LD064-70-C-P1H | ATA-disc chip | Silicon-Storage-Technology-Inc- | PSDIP | 32 | 0°C | 70°C | 363 K |
| SST58LD096-70-C-P1H | ATA-disc chip | Silicon-Storage-Technology-Inc- | PSDIP | 32 | 0°C | 70°C | 363 K |
| W4NXE4C-LD00 | Diameter: 76.2mm; low micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | distributor | - | - | - | - | 279 K |
| W4NXE8C-LD00 | Diameter: 76.2mm; low micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | distributor | - | - | - | - | 279 K |
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