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LN10

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
DLN10Diffused junction type silicon diode, low-loss rectifierSANYO-Electric-Co--Ltd-12642--58 K
MLN1027FNPN silicon RF power transistorAdvanced-Semiconductor-Inc--2-65°C200°C17 K
MLN1027SNPN silicon RF power transistorAdvanced-Semiconductor-Inc--4-65°C200°C16 K
MLN1027SLNPN silicon RF power transistorAdvanced-Semiconductor-Inc--4-65°C200°C16 K
MLN1027SSNPN silicon RF power transistorAdvanced-Semiconductor-Inc--4-65°C200°C17 K
MLN1030FNPN silicon RF power transistorAdvanced-Semiconductor-Inc--2-65°C200°C17 K
MLN1030SNPN silicon RF power transistorAdvanced-Semiconductor-Inc--4-65°C200°C18 K
MLN1030SLNPN silicon RF power transistorAdvanced-Semiconductor-Inc--4-65°C200°C16 K
MLN1030SSNPN silicon RF power transistorAdvanced-Semiconductor-Inc--4-65°C200°C17 K
MLN1033FNPN silicon RF power transistorAdvanced-Semiconductor-Inc--2-65°C200°C17 K
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