| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 48LR160D | Standard recovery diode | International-Rectifier | - | 2 | -40°C | 200°C | 206 K |
| ALR100 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 2 | -65°C | 250°C | 17 K |
| HY62256ALLR1-55 | 32Kx8bit CMOS SRAM, standby current=25uA, 55ns | distributor | TSOP I | 28 | 0°C | 70°C | 820 K |
| HY62256ALLR1-70 | 32Kx8bit CMOS SRAM, standby current=25uA, 70ns | distributor | TSOP I | 28 | 0°C | 70°C | 820 K |
| HY62256ALLR1-85 | 32Kx8bit CMOS SRAM, standby current=25uA, 85ns | distributor | TSOP I | 28 | 0°C | 70°C | 820 K |
| HY62256ALR1-55 | 32Kx8bit CMOS SRAM, standby current=100uA, 55ns | distributor | TSOP I | 28 | 0°C | 70°C | 820 K |
| HY62256ALR1-70 | 32Kx8bit CMOS SRAM, standby current=100uA, 70ns | distributor | TSOP I | 28 | 0°C | 70°C | 820 K |
| HY62256ALR1-85 | 32Kx8bit CMOS SRAM, standby current=100uA, 85ns | distributor | TSOP I | 28 | 0°C | 70°C | 820 K |
| IRLR110A | Power MOSFET | Fairchild-Semiconductor | - | - | - | - | 256 K |
| IRLR120A | N-CHANNEL MOSFET | Fairchild-Semiconductor | - | - | - | - | 225 K |
| [1] 2 [3] |
|---|
