| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| GM71C17400CLT-6 | 4,194,304 words x 4 bit CMOS dynamic RAM, 60ns, low power | distributor | TSOP II | 24 | 0°C | 70°C | 99 K |
| GM71C17403CLT-6 | CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns, low power | distributor | TSOP II | 24 | 0°C | 70°C | 97 K |
| GM71C17800CLT-6 | CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns, low power | distributor | TSOP II | 28 | 0°C | 70°C | 92 K |
| GM71CS17400CLT-6 | 4,194,304 words x 4 bit CMOS dynamic RAM, 60ns, low power | distributor | TSOP II | 24 | 0°C | 70°C | 99 K |
| GM71CS17403CLT-6 | CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns, low power | distributor | TSOP II | 24 | 0°C | 70°C | 97 K |
| GM71CS17800CLT-6 | CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns, low power | distributor | TSOP II | 28 | 0°C | 70°C | 92 K |
| HY51V18163HGLT-6 | Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power | distributor | TSOP II | 44 | 0°C | 70°C | 107 K |
| HY51VS18163HGLT-6 | Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power | distributor | TSOP II | 44 | 0°C | 70°C | 107 K |
| KM416C256DLT-6 | 256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 5V, self-refresh capability | Samsung-Electronic | TSOP II | 40 | 0°C | 70°C | 83 K |
| KM416V256DLT-6 | 256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 3.3V, self-refresh capability | Samsung-Electronic | TSOP II | 40 | 0°C | 70°C | 83 K |
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