Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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GM71CS18163CLT-6 | 1,048,576 words x 16 bit CMOS DRAM, 60ns, low power | distributor | TSOP II | 44 | 0°C | 70°C | 112 K |
GM71V17403CLT-6 | CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 60ns, low power | distributor | TSOP II | 24 | 0°C | 70°C | 99 K |
GM71VS17403CLT-6 | CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 60ns, low power | distributor | TSOP II | 24 | 0°C | 70°C | 99 K |
HM514400ALT-6 | 1,048,576-word x 4-bid DRAM, 60ns | distributor | TSOP I | 20 | 0°C | 70°C | 1 M |
HY51V17403HGLT-6 | 4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns, low power | distributor | TSOP II | 24 | 0°C | 70°C | 96 K |
HY51VS17403HGLT-6 | 4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns, low power | distributor | TSOP II | 24 | 0°C | 70°C | 96 K |
HY57V641620HGLT-6 | 4 banks x 1M x 16Bit synchronous DRAM, 3.3V, LVTTL, low power, 166 MHz | distributor | TSOP II | 54 | 0°C | 70°C | 86 K |
HY57V641620HGLT-6I | 4 banks x 1M x 16Bit synchronous DRAM, 3.3V, LVTTL, low power, 166 MHz | distributor | TSOP II | 54 | -40°C | 85°C | 145 K |
KM41C4000DLT-6 | 4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 60ns | Samsung-Electronic | TSOP II | 20 | 0°C | 70°C | 340 K |
KM41V4000DLT-6 | 4M x 1Bit CMOS dynamic RAM with fast page mode, 3.3V, 128ms refresh, 60ns | Samsung-Electronic | TSOP II | 20 | 0°C | 70°C | 340 K |
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