| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| KM681000BLTE-10 | 128K x 8 bit CMOS static RAM, 100ns, low power | Samsung-Electronic | TSOP F | 32 | -25°C | 85°C | 192 K |
| KM681000BLTE-10L | 128K x 8 bit CMOS static RAM, 100ns, low low power | Samsung-Electronic | TSOP F | 32 | -25°C | 85°C | 192 K |
| KM681000BLTE-7 | 128K x 8 bit CMOS static RAM, 70ns, low power | Samsung-Electronic | TSOP F | 32 | -25°C | 85°C | 192 K |
| KM681000BLTE-7L | 128K x 8 bit CMOS static RAM, 70ns, low low power | Samsung-Electronic | TSOP F | 32 | -25°C | 85°C | 192 K |
| KM681000BLTE-7L | 128K x 8 bit CMOS static RAM, 70ns, low low power | Samsung-Electronic | TSOP F | 32 | -25°C | 85°C | 192 K |
| LTE21009R | NPN microwave power transistor | Philips-Semiconductors | SOT440 | - | - | - | 55 K |
| LTE21025R | NPN microwave power transistor | Philips-Semiconductors | SOT | 3 | - | - | 51 K |
| LTE42005S | NPN microwave power transistor | Philips-Semiconductors | SOT440 | - | - | - | 52 K |
| LTE42005S | NPN microwave power transistor | Philips-Semiconductors | SOT | 3 | - | - | 44 K |
| LTE42012R | NPN microwave power transistor | Philips-Semiconductors | SOT440 | - | - | - | 72 K |
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