| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| DS1100LZ-250 | 3.3V 5-tap economy timing element (delay line), 250ns | Dallas-Semiconductor | SO | 8 | -40°C | 85°C | 156 K |
| DS1100LZ-300 | 3.3V 5-tap economy timing element (delay line), 300ns | Dallas-Semiconductor | SO | 8 | -40°C | 85°C | 156 K |
| DS1100LZ-500 | 3.3V 5-tap economy timing element (delay line), 500ns | Dallas-Semiconductor | SO | 8 | -40°C | 85°C | 156 K |
| HM514400ALZ-6 | 1,048,576-word x 4-bid DRAM, 60ns | distributor | ZIP | 20 | 0°C | 70°C | 1 M |
| HM514400ALZ-7 | 1,048,576-word x 4-bid DRAM, 70ns | distributor | ZIP | 20 | 0°C | 70°C | 1 M |
| HM514400ALZ-8 | 1,048,576-word x 4-bid DRAM, 80ns | distributor | ZIP | 20 | 0°C | 70°C | 1 M |
| HM514400ASLZ-7 | 1,048,576-word x 4-bid DRAM, 70ns | distributor | ZIP | 20 | 0°C | 60°C | 1 M |
| HM514400ASLZ-8 | 1,048,576-word x 4-bid DRAM, 80ns | distributor | ZIP | 20 | 0°C | 60°C | 1 M |
| HM514400CLZ-7 | 1,048,576-word x 4-bit dynamic random access memory, 70ns | distributor | ZIP | 20 | 0°C | 70°C | 235 K |
| HM514400CLZ-8 | 1,048,576-word x 4-bit dynamic random access memory, 80ns | distributor | ZIP | 20 | 0°C | 70°C | 235 K |
| [1] 2 [3] [4] [5] [6] |
|---|
