| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| CM150DU-24F | 150A IGBT module for high power switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 150°C | 73 K |
| CM150DY-12H | 150 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 7 | -40°C | 150°C | 47 K |
| CM150DY-24H | 150 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 7 | -40°C | 150°C | 47 K |
| CM150TF-12H | 150 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 19 | -40°C | 150°C | 53 K |
| CM150TU-12F | 150A IGBT module for high power switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 17 | -40°C | 150°C | 81 K |
| CM150TU-12F | 150A IGBT module for high power switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 17 | -40°C | 150°C | 81 K |
| PM150CSJ060 | 150 Amp intelligent power module for flat-base type insulated package | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 25 | -20°C | 150°C | 70 K |
| PM150CVA060 | 150 Amp intelligent power module for flat-base type insulated package | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 25 | -20°C | 150°C | 61 K |
| PM150DSA120 | 100 Amp intelligent power module for flat-base type insulated package | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 13 | -20°C | 150°C | 62 K |
| PM150RSA060 | 150 Amp intelligent power module for flat-base type insulated package | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 25 | -20°C | 150°C | 80 K |
| [1] [2] [3] [4] [5] [6] 7 [8] [9] [10] |
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