| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| KM416L8031BT-GY | 128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. | Samsung-Electronic | - | 66 | 0°C | 70°C | 750 K |
| KM416L8031BT-GZ | 128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. | Samsung-Electronic | - | 66 | 0°C | 70°C | 750 K |
| KM416S8030BT-G/F10 | 2M x 16bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 66 MHz (CL=2&3) | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 133 K |
| KM416S8030BT-G/F8 | 2M x 16bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 125 MHz (CL=3) | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 133 K |
| KM416S8030BT-G/FA | 2M x 16bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 133 MHz (CL=3) | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 133 K |
| KM416S8030BT-G/FH | 2M x 16bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 100 MHz (CL=2) | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 133 K |
| KM416S8030BT-G/FL | 2M x 16bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 100 MHz (CL=3) | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 133 K |
| KM416S8030T-G/F10 | 2M x 16bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 116 K |
| KM416S8030T-G/FH | 2M x 16bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 116 K |
| KM416S8030T-G/FL | 2M x 16bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 116 K |
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