| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| KM416L8031BT-F0 | 128 Mb DDR SDRAM. Version 0.61, Operating freq. 100 MHz, speed 10ns. | Samsung-Electronic | - | 66 | 0°C | 70°C | 750 K |
| KM416L8031BT-FY | 128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5ns. | Samsung-Electronic | - | 66 | 0°C | 70°C | 750 K |
| KM416L8031BT-FZ | 128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5ns. | Samsung-Electronic | - | 66 | 0°C | 70°C | 750 K |
| KM416L8031BT-G0 | 128 Mb DDR SDRAM. Version 0.61, Operating freq. 100 MHz, speed 10ns. | Samsung-Electronic | - | 66 | 0°C | 70°C | 750 K |
| KM416RD8AC-RG60 | 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). | Samsung-Electronic | microBGA(normal CSP) | 62 | 0°C | 70°C | 3 M |
| KM416RD8AC-RK70 | 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). | Samsung-Electronic | microBGA(normal CSP) | 62 | 0°C | 70°C | 3 M |
| KM416RD8AC-RK80 | 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz). | Samsung-Electronic | microBGA(normal CSP) | 62 | 0°C | 70°C | 3 M |
| KM416RD8AD-RG60 | 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). | Samsung-Electronic | microBGA(mirrored CS | 62 | 0°C | 70°C | 3 M |
| KM416RD8AD-RK70 | 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). | Samsung-Electronic | microBGA(mirrored CS | 62 | 0°C | 70°C | 3 M |
| KM416RD8AD-RK80 | 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz). | Samsung-Electronic | microBGA(mirrored CS | 62 | 0°C | 70°C | 3 M |
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