| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FU-632SEA-3M41A | 1542.14nm EAM/DFB-LD module with singlemode fiber (WDM) | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 14 | -20°C | 70°C | 68 K |
| FU-632SEA-6M41A | 1542.14nm EAM/DFB-LD module with singlemode fiber (WDM) | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 14 | -20°C | 70°C | 68 K |
| KM416RD8AS-RM80 | 256K x 16 x 32s dependent banks for consumer package. Access time: 40 ns, speed: 800 Mbps(400 MHz). | Samsung-Electronic | microBGA | 54 | 0°C | 90°C | 3 M |
| KM416RD8AS-SM80 | 256K x 16 x 32s dependent banks for consumer package. Access time: 40 ns, speed: 800 Mbps(400 MHz). | Samsung-Electronic | microBGA | 54 | 0°C | 90°C | 3 M |
| KM418RD8AC-RG60 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). | Samsung-Electronic | microBGA(normal CSP) | 62 | 0°C | 70°C | 3 M |
| KM418RD8AC-RK70 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). | Samsung-Electronic | microBGA(normal CSP) | 62 | 0°C | 70°C | 3 M |
| KM418RD8AC-RK80 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz). | Samsung-Electronic | microBGA(normal CSP) | 62 | 0°C | 70°C | 3 M |
| KM418RD8AD-RG60 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). | Samsung-Electronic | microBGA(mirrored CS | 62 | 0°C | 70°C | 3 M |
| KM418RD8AD-RK70 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). | Samsung-Electronic | microBGA(mirrored CS | 62 | 0°C | 70°C | 3 M |
| KM418RD8AD-RK80 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz). | Samsung-Electronic | microBGA(mirrored CS | 62 | 0°C | 70°C | 3 M |
| << [7] [8] [9] [10] [11] 12 [13] [14] [15] [16] [17] >> |
|---|
