Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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ESM412006 | 600V fast recovery diode | distributor | - | - | -40°C | 125°C | 58 K |
ESM412008 | 800V fast recovery diode | distributor | - | - | -40°C | 125°C | 58 K |
ESM412010 | 1000V fast recovery diode | distributor | - | - | -40°C | 125°C | 58 K |
M5M410092BRF | 3D-RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 128 | 0°C | 70°C | 1 M |
MM4148 | 1N4148 single diode. Min breakdown voltage BV=100V | distributor | - | - | -65°C | 200°C | 22 K |
MM4150 | 1N4150 single diode. Min breakdown voltage BV=75V | distributor | - | - | -65°C | 200°C | 21 K |
PDM41024SA10TSO | 1Megabit static RAM 128K x 8-bit | distributor | SOJ | 32 | 0°C | 70°C | 301 K |
PDM41024SA10TSOTR | 1Megabit static RAM 128K x 8-bit | distributor | SOJ | 32 | 0°C | 70°C | 301 K |
PDM41024SA10TSOTR | 1Megabit static RAM 128K x 8-bit | distributor | SOJ | 32 | 0°C | 70°C | 301 K |
PDM41024SA10TSOTY | 1Megabit static RAM 128K x 8-bit | distributor | SOJ | 32 | 0°C | 70°C | 301 K |
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