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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
M6MGB160S2BVP16,777,216-bit (1048,576-word by 16-bit) CMOS 3.3V-only, block erase flash memoryMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP48-20°C85°C258 K
M6MGB160S4BVP16777216-bit (1048576-word by 16-bit) CMOS 3.3V-only flash memoryMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP48-20°C85°C257 K
M6MGB162S2BVP16777216-bit (1048576-word by 16-bit) CMOS 3.3V-only flash memoryMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP48-20°C85°C235 K
M6MGB162S4BVP16777216-bit (1048576-word by 16-bit) CMOS 3.3V-only flash memoryMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP48-20°C85°C239 K
M6MGT160S2BVP16,777,216-bit (1048,576-word by 16-bit) CMOS 3.3V-only, block erase flash memoryMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP48-20°C85°C258 K
M6MGT166S4BWG16777216-bit CMOS 3.3V-only, block erase flash memoryMitsubishi-Electric-Corporation-Semiconductor-Group-72-20°C85°C259 K
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