| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1MB10-120 | Fuji discrete package IGBT | distributor | - | 3 | - | - | 226 K |
| 1MB10D-120 | Fuji discrete package IGBT | distributor | - | 3 | - | - | 269 K |
| FMB100 | NPN Multi-Chip General Purpose Amplifier | Fairchild-Semiconductor | SOIC | 6 | - | - | 44 K |
| FMB1020 | NPN & PNP Complementary Dual Transistor [Obsolete] | Fairchild-Semiconductor | SOIC | 6 | - | - | 29 K |
| TPSMB10 | Surface Mount Automotive Transient Voltage Suppressor | General-Semiconductor | - | - | - | - | 63 K |
| TPSMB10A | Surface Mount Automotive Transient Voltage Suppressor | General-Semiconductor | - | - | - | - | 63 K |
| TZMB10 | 10V zener diode | Vishay-Telefunken | MiniMELF SOD80 | - | - | - | 76 K |
| VMB10-12F | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 17 K |
| VMB10-12S | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 16 K |
| VMB100-12 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 17 K |
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