| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MMG05N60D | Insulated gate bipolar transistor | Motorola | - | 4 | -55°C | 150°C | 135 K |
| MMG05N60D | IGBT N-Channel (0.5A, 600V) | ON-Semiconductor | - | 4 | - | - | 138 K |
| MMG05N60DT1 | IGBT N-Channel (0.5A, 600V) | ON-Semiconductor | - | 4 | - | - | 138 K |
| MMG05N60DT3 | IGBT N-Channel (0.5A, 600V) | ON-Semiconductor | - | 4 | - | - | 138 K |
| P6MG0503ZS | Input voltage:5V, output voltage 3/3V (100/100mA), 3KV isolated 0.6-1W regulated dual split output | distributor | DIP | 14 | -40°C | 85°C | 279 K |
| P6MG0505ZS | Input voltage:5V, output voltage 5/5V (100/100mA), 3KV isolated 0.6-1W regulated dual split output | distributor | DIP | 14 | -40°C | 85°C | 279 K |
| P6MG053R3ZS | Input voltage:5V, output voltage 3.3/3.3V (100/100mA), 3KV isolated 0.6-1W regulated dual split output | distributor | DIP | 14 | -40°C | 85°C | 279 K |
| P6MG054R8ZS | Input voltage:5V, output voltage 4.85/4.85V (100/100mA), 3KV isolated 0.6-1W regulated dual split output | distributor | DIP | 14 | -40°C | 85°C | 279 K |
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