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MJ2955

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
MJ2955Complementary silicon power transistordistributor-2-65°C200°C174 K
MJ2955Complementary silicon power transistordistributor-2-65°C200°C167 K
MJ2955Complementary silicon power transistorMotorola-2-65°C200°C130 K
MJ2955COMPLEMENTARY SILICON POWER TRANSISTORSSGS-Thomson-Microelectronics----47 K
MJ2955Silicon power transistor. General purpose switching and amplifier applications. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 7Vdc, Ic = 15Adc, Ib = 7Adc.distributor-3-65°C200°C48 K
MJ2955PNP High power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc Ic = 15Adc, PD = 115W.distributor-3-65°C200°C48 K
MJ2955PNP. Planar silicon transistor. Audio power amplifier DC to DC converter.Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors-3--64 K
MJ2955A60V Complementary silicon power transistordistributor-2-65°C200°C200 K
MJ2955AComplementary silicon high-power transistordistributor-2-65°C200°C193 K
MJ2955AComplementary silicon high power transistorMotorola-2-65°C200°C235 K
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