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MJE13003

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
HMJE13003Emitter to base voltage:9V; 1.5A NPN epitaxial planar transistordistributor-3--38 K
HMJE13003DEmitter to base voltage:9V; 1.5A NPN epitaxial planar transistordistributor-3--44 K
HMJE13003TEmitter to base voltage:8V; 1A NPN epitaxial planar transistor for high voltagedistributor-3--38 K
MJE13003Switching TransistorKorea-Electronics-Co--Ltd-----394 K
MJE13003400V switchmode series NPN power transistordistributor-3-65°C150°C182 K
MJE13003NPN silicon power transistorMotorola-3-65°C150°C304 K
MJE13003SWITCHMODE Series NPN Silicon Power TransistorsON-Semiconductor-3--304 K
MJE13003NPN silicon transistor. V(BR)cbo=700V, V(BR)ceo=400V, V(BR)ebo=9VWing-Shing-Electronic-Co----manufacturer-of-power-semiconductors-3--27 K
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