Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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SML10-12A-T258R | 1000V, 12A High Speed Rectifier diode | Semelab-Plc- | TO258 | - | - | - | 11 M |
SML1001R1AN | 1000V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO3 | - | - | - | 60 K |
SML1001R3AN | 1000V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO3 | - | - | - | 60 K |
SML1001RHN | 1000V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO258 | - | - | - | 18 K |
UML10 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 16 K |
UML100 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 6 | -65°C | 200°C | 22 K |
UML15 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 16 K |
UML1N | Low frequency transistor plus diode | ROHM | UMT5 | 5 | - | - | 25 K |
UML1SL | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 15 K |
UML1T | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 3 | -65°C | 200°C | 17 K |
[1] 2 [3] [4] [5] [6] [7] [8] [9] [10] |
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