| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| ML1012R | High power semiconductor laser | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -10°C | 60°C | 50 K |
| ML1013R | High power semiconductor laser | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -10°C | 60°C | 50 K |
| ML1016R | High power semiconductor laser | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -10°C | 60°C | 38 K |
| ML101J8 | High power semiconductor laser | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -10°C | 60°C | 47 K |
| ML120G2 | High power semiconductor laser | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -10°C | 60°C | 50 K |
| ML120G3 | High power semiconductor laser | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -10°C | 60°C | 50 K |
| ML120G6 | High power semiconductor laser | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -10°C | 60°C | 38 K |
| ML120G8 | High power semiconductor laser | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -10°C | 60°C | 47 K |
| ML1412R | High power semiconductor laser | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -10°C | 60°C | 50 K |
| SML120L16 | 1200V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO264AA | - | - | - | 20 K |
| [1] [2] [3] [4] [5] 6 [7] [8] [9] [10] |
|---|
