| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| SML1001R1AN | 1000V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO3 | - | - | - | 60 K |
| SML1001R3AN | 1000V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO3 | - | - | - | 60 K |
| SML1001RHN | 1000V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO258 | - | - | - | 18 K |
| SML100A9 | 1000V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO3 | - | - | - | 20 K |
| SML100B11 | 1000V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO247AD | - | - | - | 21 K |
| SML100B11F | 1000V Vdss N-Channel+Fred FET (field effect transistor) | Semelab-Plc- | TO247AD | - | - | - | 21 K |
| SML100B13 | 1000V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO247AD | - | - | - | 21 K |
| SML100B13F | 1000V Vdss N-Channel+Fred FET (field effect transistor) | Semelab-Plc- | TO247AD | - | - | - | 21 K |
| TSML1000 | Extended power IR emitter | Vishay-Telefunken | - | - | - | - | 39 K |
| UML100 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 6 | -65°C | 200°C | 22 K |
| 1 [2] [3] |
|---|
