| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| ML120G10 | Laser driver IC for optical optical information systems | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -10°C | 80°C | 165 K |
| ML120G2 | High power semiconductor laser | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -10°C | 60°C | 50 K |
| ML120G3 | High power semiconductor laser | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -10°C | 60°C | 50 K |
| ML120G6 | High power semiconductor laser | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -10°C | 60°C | 38 K |
| ML120G8 | High power semiconductor laser | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -10°C | 60°C | 47 K |
| SML120B10 | 1200V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO247AD | - | - | - | 20 K |
| SML120B8 | 1200V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO247AD | - | - | - | 21 K |
| SML120J15 | 1200V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | SOT227 | - | - | - | 23 K |
| SML120J25 | 1200V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | SOT227 | - | - | - | 23 K |
| SML120L16 | 1200V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO264AA | - | - | - | 20 K |
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