Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
ML53612 | Bus system interface and time-slot interchange | distributor | LQFP | 176 | -40°C | 85°C | 696 K |
ML53812-2 | Bus system interface and time-slot interchange | distributor | LQFP | 176 | -40°C | 85°C | 668 K |
SML50A15 | 500V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO3 | - | - | - | 20 K |
SML50A19 | 500V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO3 | - | - | - | 20 K |
SML50A21 | 500V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO3 | - | - | - | 20 K |
SML50B20 | 500V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO247AD | - | - | - | 21 K |
SML50B22 | 500V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO247AD | - | - | - | 21 K |
SML50B22F | 500V Vdss N-Channel+Fred FET (field effect transistor) | Semelab-Plc- | TO247AD | - | - | - | 21 K |
SML50B26 | 500V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO247AD | - | - | - | 21 K |
UML500 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 18 K |
1 [2] [3] |
---|