| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FMMT589 | PNP silicon planar medium power high performance transistor | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 48 K |
| FMMT589 | PNP silicon planar medium power high performance transistor | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 48 K |
| MT58L1MY18DF-10 | 3.3V, 1 Meg x 18 pipelined, DCD syncburst SRAM, 10ns | distributor | FBGA | 165 | 0°C | 70°C | 526 K |
| MT58L1MY18DF-6 | 3.3V, 1 Meg x 18 pipelined, DCD syncburst SRAM, 6ns | distributor | FBGA | 165 | 0°C | 70°C | 526 K |
| MT58L1MY18DF-7.5 | 3.3V, 1 Meg x 18 pipelined, DCD syncburst SRAM, 7.5ns | distributor | FBGA | 165 | 0°C | 70°C | 526 K |
| MT58L512Y32DF-10 | 3.3V, 512K x 32 pipelined, DCD syncburst SRAM, 10ns | distributor | FBGA | 165 | 0°C | 70°C | 526 K |
| MT58L512Y32DF-6 | 3.3V, 512K x 32 pipelined, DCD syncburst SRAM, 6ns | distributor | FBGA | 165 | 0°C | 70°C | 526 K |
| MT58L512Y32DF-7.5 | 3.3V, 512K x 32 pipelined, DCD syncburst SRAM, 7.5ns | distributor | FBGA | 165 | 0°C | 70°C | 526 K |
| MT58L512Y32DT-6 | 3.3V, 512K x 32 pipelined, DCD syncburst SRAM, 6ns | distributor | TQFP | 100 | 0°C | 70°C | 526 K |
| MT58L512Y36DF-6 | 3.3V, 512K x 36 pipelined, DCD syncburst SRAM, 6ns | distributor | FBGA | 165 | 0°C | 70°C | 526 K |
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