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N011

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
GN01100BGaAs IC (with built-in ferroelectric)Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation----30 K
XN01110Silicon PNP epitaxial planer transistorPanasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation----33 K
XN01111Silicon PNP epitaxial planer transistorPanasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation----34 K
XN01112Silicon PNP epitaxial planer transistorPanasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation----33 K
XN01113Silicon PNP epitaxial planer transistorPanasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation----33 K
XN01114Silicon PNP epitaxial planer transistorPanasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation----33 K
XN01115Silicon PNP epitaxial planer transistorPanasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation----33 K
XN01116Silicon PNP epitaxial planer transistorPanasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation----33 K
XN01117Silicon PNP epitaxial planer transistorPanasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation----33 K
XN01118Silicon PNP epitaxial planer transistorPanasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation----34 K
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