| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MGSF1N03LT1 | Low rDS(on) small-signal MOSFET tmos single N-channel field effect transistor | Motorola | - | 3 | -55°C | 150°C | 125 K |
| MGSF1N03LT1 | Small-signal MOSFETs TMOS single N-channel field effect transistor | Motorola | - | 3 | -55°C | 150°C | 183 K |
| PHB11N03LT | 30 V, N-channel trenchMOS transistor logic level FET | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 107 K |
| PHD11N03LT | 30 V, N-channel trenchMOS transistor logic level FET | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 107 K |
| PHD83N03LT | 25 V, N-channel enhancement mode field-effect transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 282 K |
| PHD83N03LT | 25 V, N-channel enhancement mode field-effect transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 282 K |
| PHD95N03LT | 25 V, N-channel enhancement mode field-effect transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 282 K |
| PHP45N03LTA | 25 V, N-channel enhancement mode field-effect transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 298 K |
| RFD16N03LSM | Power dissipation 90 W Transistor polarity N Channel Current Id cont. 16 A Current Idm pulse 80 A Voltage Vgs th max. 2 V Voltage Vds max 30 V Resistance Rds on 0.022 R Temperature current 25 ?C | Fairchild-Semiconductor | - | - | - | - | 130 K |
| STD20N03L | Power dissipation 80 W Transistor polarity N Channel Current Id cont. 20 A Current Idm pulse 80 A Voltage Vgs th max. 2.5 V Voltage Vds max 30 V Resistance Rds on 0.022 R Temperature current 25 ?C | SGS-Thomson-Microelectronics | - | - | - | - | 105 K |
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