| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| RF1S25N06SM | 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 106 K |
| RFP15N06L | 15A, 50V and 60V, 0.140 Ohm, Logic Level N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 40 K |
| STB60N06-14 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 87 K |
| STD15N06L | N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 140 K |
| STP19N06L | N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 142 K |
| STP19N06LFI | N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 142 K |
| STP50N06L | N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 199 K |
| STP50N06LFI | N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 199 K |
| STP80N06-10 | N-CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 77 K |
| STW80N06-10 | N-CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 57 K |
| [1] [2] [3] [4] [5] [6] 7 [8] [9] [10] |
|---|
