Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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MGW12N120 | Insulated Gate Bipolar Transistor N-Channel | ON-Semiconductor | - | 3 | - | - | 136 K |
MGW12N120D | Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel | ON-Semiconductor | - | 3 | - | - | 168 K |
MGW20N120 | Insulated Gate Bipolar Transistor N-Channel | ON-Semiconductor | - | 3 | - | - | 139 K |
MGY20N120D | Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel | ON-Semiconductor | - | 3 | - | - | 171 K |
MGY25N120 | Insulated Gate Bipolar Transistor N-Channel | ON-Semiconductor | - | 3 | - | - | 153 K |
MGY25N120D | Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel | ON-Semiconductor | - | 3 | - | - | 171 K |
RFL1N12L | 1.0A, 120V and 150V, 1.900 ohm, Logic Level, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 31 K |
TN1215-600B | STANDARD SCR | SGS-Thomson-Microelectronics | - | - | - | - | 85 K |
TN1215-600G | SCR | SGS-Thomson-Microelectronics | - | - | - | - | 66 K |
TN1215-800G | SCR | SGS-Thomson-Microelectronics | - | - | - | - | 66 K |
1 [2] [3] [4] [5] [6] [7] [8] [9] [10] |
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