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N12

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
MGW12N120Insulated Gate Bipolar Transistor N-ChannelON-Semiconductor-3--136 K
MGW12N120DInsulated Gate Bipolar Transistor with Anti-Parallel Diode N-ChannelON-Semiconductor-3--168 K
MGW20N120Insulated Gate Bipolar Transistor N-ChannelON-Semiconductor-3--139 K
MGY20N120DInsulated Gate Bipolar Transistor with Anti-Parallel Diode N-ChannelON-Semiconductor-3--171 K
MGY25N120Insulated Gate Bipolar Transistor N-ChannelON-Semiconductor-3--153 K
MGY25N120DInsulated Gate Bipolar Transistor with Anti-Parallel Diode N-ChannelON-Semiconductor-3--171 K
RFL1N12L1.0A, 120V and 150V, 1.900 ohm, Logic Level, N-Channel Power MOSFETIntersil-Corporation----31 K
TN1215-600BSTANDARD SCRSGS-Thomson-Microelectronics----85 K
TN1215-600GSCRSGS-Thomson-Microelectronics----66 K
TN1215-800GSCRSGS-Thomson-Microelectronics----66 K
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