| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N3107 | 800mW NPN silicon AF medium power transistor | distributor | - | 3 | -65°C | 200°C | 143 K |
| 2N3108 | 800mW NPN silicon AF medium power transistor | distributor | - | 3 | -65°C | 200°C | 143 K |
| 2N3109 | 800mW NPN silicon AF medium power transistor | distributor | - | 3 | -65°C | 200°C | 143 K |
| MN3101 | Clock generator/driver CMOS LSI for BBD | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | DIP | 8 | -10°C | 70°C | 158 K |
| TC54VN3101ECB | Voltage detector. Detected voltage 3.1V. Output form: Nch open drain. Tolerance +-1.0%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
| TC54VN3101ECBTR | Voltage detector, Nch output, 3.1V, +/-1% | Microchip-Technology-Inc- | - | 3 | -40°C | 85°C | 215 K |
| TC54VN3101ECTTR | Voltage detector, Nch open drain, 3.1V, +/-1% | Microchip-Technology-Inc- | - | 5 | -40°C | 85°C | 215 K |
| TC54VN3101EMB | Voltage detector. Detected voltage 3.1V. Output form: Nch open drain. Tolerance +-1.0%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
| TC54VN3101EMBTR | Voltage detector, Nch open drain, 3.1V, +/-1% | Microchip-Technology-Inc- | - | 3 | -40°C | 85°C | 215 K |
| TC54VN3102ECB | Voltage detector. Detected voltage 3.1V. Output form: Nch open drain. Tolerance +-2.0%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
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