| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N3209 | Silicon PNP transistor intended for high-speed low saturation switching applications up to 100 mA | SGS-Thomson-Microelectronics | - | 3 | -65°C | 200°C | 113 K |
| 2N3209CSM | 20V Vce, 0.2A Ic, 400MHz PNP bipolar transistor | Semelab-Plc- | LCC1 | - | - | - | 20 K |
| 2N3209DCSM | 20V Vce, 0.2A Ic, 400MHz PNP bipolar transistor | Semelab-Plc- | LCC2 | - | - | - | 16 K |
| IRF5N3205 | HEXFET power MOSFET surface mount. BVDSS = 55V, RDS(on) = 0.008 Ohm, ID = 55A | International-Rectifier | - | 3 | -55°C | 150°C | 118 K |
| TC54VN3201ECBTR | Voltage detector, Nch output, 3.2V, +/-1% | Microchip-Technology-Inc- | - | 3 | -40°C | 85°C | 215 K |
| TC54VN3201EMBTR | Voltage detector, Nch open drain, 3.2V, +/-1% | Microchip-Technology-Inc- | - | 3 | -40°C | 85°C | 215 K |
| VN3205N3 | 50V N-channel enhancement-mode vertical DMOS FET | distributor | - | 3 | -55°C | 150°C | 459 K |
| VN3205N6 | 50V N-channel enhancement-mode vertical DMOS FET | distributor | DIP | 14 | -55°C | 150°C | 459 K |
| VN3205N8 | 50V N-channel enhancement-mode vertical DMOS FET | distributor | - | 3 | -55°C | 150°C | 459 K |
| VN3205ND | 50V N-channel enhancement-mode vertical DMOS FET | distributor | Die | 3 | -55°C | 150°C | 459 K |
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