| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HGTD6N50E1 | 6A, 400V and 500V N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 32 K |
| HGTD6N50E1S | 6A, 400V and 500V N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 32 K |
| HGTH12N50E1 | 10A, 12A, 400V and 500V N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 38 K |
| HGTH20N50E1D | 20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes | Intersil-Corporation | - | - | - | - | 35 K |
| HGTP10N50E1D | 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes | Intersil-Corporation | - | - | - | - | 37 K |
| HGTP10N50E1HGTH12N40C1 | 10A, 12A, 400V and 500V N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 38 K |
| HGTP15N50E1 | 15A, 20A, 400V and 500V N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 35 K |
| MTW14N50E | TMOS E-FET power field effect transistor TO-247 with isolated mounting hole | Motorola | - | 4 | -55°C | 150°C | 205 K |
| MTW20N50E | TMOS E-FET power field effect transistor TO-247 with isolated mounting hole | Motorola | - | 4 | -55°C | 150°C | 193 K |
| MTY30N50E | TMOS E-FET power field effect transistor | Motorola | - | 3 | -55°C | 150°C | 237 K |
| 1 [2] [3] [4] [5] [6] [7] [8] |
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