Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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MTE53N50E | ISOTOP TMOS E-FET power field effect transistor | Motorola | SOT | 4 | -40°C | 150°C | 167 K |
MTP1N50E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 159 K |
MTP2N50E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 244 K |
MTP3N50E | TMOS E-FET high energy power FET | Motorola | - | 4 | -65°C | 150°C | 251 K |
MTP4N50E | TMOS E-FET high energy power FET | Motorola | - | 4 | -55°C | 150°C | 254 K |
MTP8N50E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 158 K |
MTV16N50E | TMOS E-FET power field effect transistor D3PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 276 K |
MTV20N50E | TMOS E-FET power field effect transistor D3PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 273 K |
MTV25N50E | TMOS E-FET power field effect transistor D3PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 280 K |
MTV25N50E | TMOS E-FET power field effect transistor D3PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 280 K |
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