| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MTB8N50E | TMOS E-FET high energy power FET D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 162 K |
| MTD1N50E | TMOS E-FET power field effect transistor D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 267 K |
| MTD2N50E | TMOS E-FET high energy power FET D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 299 K |
| MTE30N50E | ISOTOP TMOS E-FET power field effect transistor | Motorola | SOT | 4 | -55°C | 150°C | 229 K |
| PHB3N50E | 500 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 78 K |
| PHB3N50E | 500 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 78 K |
| PHP1N50E | 500 V, power MOS transistor | Philips-Semiconductors | TO | 3 | - | - | 21 K |
| PHP3N50E | 500 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 78 K |
| PHW11N50E | 500 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 102 K |
| PHW11N50E | 500 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 102 K |
| [1] [2] 3 [4] [5] [6] [7] [8] |
|---|
