| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| PHB6N50E | 500 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 77 K |
| PHP4N50E | 500 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 21 K |
| PHP6N50E | 500 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 77 K |
| PHP6N50E | 500 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 77 K |
| PHP8N50E | 500 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 90 K |
| PHU2N50E | 500 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 64 K |
| PHW8N50E | 500 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 90 K |
| PHX2N50E | 500 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 77 K |
| PHX4N50E | 500 V, power MOS transistor isolated version of PHP4N50E | Philips-Semiconductors | SOT | 3 | - | - | 24 K |
| PHX5N50E | 500 V, power MOS transistor isolated version of PHP8N50E | Philips-Semiconductors | SOT | 3 | - | - | 24 K |
| [1] [2] [3] 4 [5] [6] [7] [8] |
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