| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| PHB11N50E | PowerMOS transistor. Avalancne energy rated. | Philips-Semiconductors | SOT404 | 3 | -55°C | 150°C | 41 K |
| PHB2N50E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | SOT404 | 3 | -55°C | 150°C | 93 K |
| PHP11N50E | PowerMOS transistor. Avalancne energy rated. | Philips-Semiconductors | SOT78 | 3 | -55°C | 150°C | 41 K |
| PHP11N50E | PowerMOS transistor. Avalancne energy rated. | Philips-Semiconductors | TO220AB | 3 | -55°C | 150°C | 41 K |
| PHW11N50E | PowerMOS transistor. Avalancne energy rated. | Philips-Semiconductors | SOT429 | 3 | -55°C | 150°C | 41 K |
| PHW14N50E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | TO247 | 3 | -55°C | 150°C | 27 K |
| PHW14N50E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | SOT429 | 3 | -55°C | 150°C | 27 K |
| PHW20N50E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | TO247 | 3 | -55°C | 150°C | 27 K |
| PHX6N50E | 500 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 73 K |
| PHX8N50E | 500 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 74 K |
| [1] [2] [3] [4] 5 [6] [7] [8] |
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